1998. 10. 31
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SEMICONDUCTOR
TECHNICAL DATA
BF422
SILICON NPN TRIPLE DIFFUSED TYPE
Revision No : 2
HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATION.
COLOR TV CHROMA OUTPUT APPLICATIONS.
FEATURES
High Voltage : V
CEO
>250V
Complementary to BF423.
MAXIMUM RATING (Ta=25 )
TO-92
DIM
MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2
3
B
A
J
K
G
H
F
F
L
E
C
E
C
M
N
0.45 MAX
M
1.00
N
1. EMITTER
2. COLLECTOR
3. BASE
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=200V, I
E
=0
-
-
10
nA
V
CB
=200V, I
E
=0, Tj=150
-
-
10
A
Emitter Cut-off Current
I
EBO
V
EB
=5V, I
C
=0
-
-
50
nA
DC Current Gain
h
FE
V
CE
=20V, I
C
=25mA
50
-
-
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=30mA, I
B
=5mA
-
-
0.6
V
Base-Emitter Voltage
V
BE
V
CE
=-20V, I
C
=25mA
-
0.75
-
V
Transition Frequency
f
T
V
CE
=10V, I
C
=10mA
60
-
-
MHz
Reverse Transfer Capacitance
C
re
V
CB
=30V, I
E
=0, f=1MHz
-
-
1.6
pF
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
250
V
Collector-Emitter Voltage
V
CEO
250
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
DC
I
C
50
mA
Peak
I
CP
100
Collector Power Dissipation
P
C
625
mW
Base Current
I
B
50
mA
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-65 150
1998. 10. 31
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BF422
Revision No : 2
0
COLLECTOR CURRENT I (mA)
C
0
COLLECTOR-EMITTER VOLTAGE V (V)
CE
CE
C
I - V (LOW VOLTAGE REGION)
0
COLLECTOR CURRENT I (mA)
C
0
BASE-EMITTER VOLTAGE V (V)
BE
BE
C
I - V
10
DC CURRENT GAIN h
FE
3
10
1
0.3
COLLECTOR CURRENT I (mA)
C
h - I
CE(sat)
COLLECTOR-EMITTER SATURATION
0.3
COLLECTOR CURRENT I (mA)
1
3
10
C
V - I
4
8
12
16
20
24
28
10
20
30
40
50
60
COMMON EMITTER
Ta=25 C
1.6
1.2
0.8
0.6
0.4
0.3
0.2
0.1
I =0.05mA
0
B
0.15
FE
C
30
100
0
30
50
100
300
500
C
COLLECTOR CURRENT I (mA)
C
FE
h - I
0.3
0
DC CURRENT GAIN h
FE
100
10
50
30
300
500
1
3
10
100
30
COMMON EMITTER
Ta=25 C
V =20V
10
5
CE
COMMON EMITTER
V =10V
CE
Ta=100 C
Ta=25 C
Ta=-25 C
CE(sat)
C
VOLTAGE V (V)
30
100
0.01
0.05
0.1
0.3
0.5
1
2
VOLTAGE V (V)
COLLECTOR-EMITTER SATURATION
COLLECTOR CURRENT I (mA)
0.05
0.01
CE(sat)
0.3
0.1
0.3
0.5
C
1
3
10
100
30
2
1
V - I
CE(sat)
C
COMMON EMITTER
Ta=25 C
I /I =10
5
2
C B
COMMON EMITTER
I /I =5
C B
Ta=100 C
Ta=25 C
Ta=-25 C
0.2
0.4
0.6
0.8
1.0
1.2
10
20
30
40
50
COMMON EMITTER
V =10V
CE
Ta=10
0 C
Ta=
25 C
Ta=
-2
5
C
0.03
1998. 10. 31
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BF422
Revision No : 2
COLLECTOR OUTPUT CAPACITANCE C (pF)
0
ob
0
COLLECTOR-BASE VOLTAGE V (V)
CB
re
ob
C .C - V
TRANSITION FREQUENCY f (MHz)
T
3
10
1
0.3
COLLECTOR CURRENT I (mA)
C
f - I
CB
re
REVERSE TRANSFER CAPACITANCE C (pF)
40
80
120
160
200
240
280
2
4
6
8
10
I =0
f=1MHz
Ta=25 C
E
C
ob
C
re
T
C
30
10
30
50
100
300
500
COMMON EMITTER
Ta=25 C
V =20V
CE
V =10V
CE
C
P (mW)
COLLECTOR POWER DISSIPATION
AMBIENT TEMPERATURE Ta ( C)
COLLECTOR-EMITTER VOLTAGE V (V)
COLLECTOR CURRENT I (mA)
C
CE
1000
SINGLE NONREPETITIVE
PULSE Ta=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE.
I MAX.(PULSED)
I MAX.(CONTINUOUS)
DC
O
PERAT
IO
N
0
0
C
P - Ta
3
10
SAFE OPERATING AREA
40
80
120
160
200
200
400
600
800
30
100
300
0.5
1
3
5
10
30
50
100
200
*
C
C
*
100
ms
10
ms
1m
s
*
*
*
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